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Yahyazadeh, Rajab. (1398). Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors. جلوه هنر, 2(2), 183-194. doi: 10.22051/jitl.2020.26104.1031
Rajab Yahyazadeh. "Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors". جلوه هنر, 2, 2, 1398, 183-194. doi: 10.22051/jitl.2020.26104.1031
Yahyazadeh, Rajab. (1398). 'Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors', جلوه هنر, 2(2), pp. 183-194. doi: 10.22051/jitl.2020.26104.1031
Yahyazadeh, Rajab. Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors. جلوه هنر, 1398; 2(2): 183-194. doi: 10.22051/jitl.2020.26104.1031


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