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Effect of hydrostatic pressure on optical absorption spectrum AlGaN/GaN multi-quantum wells | ||
| Journal of Interfaces, Thin Films, and Low dimensional systems | ||
| دوره 3، شماره 2، شهریور 2020، صفحه 277-285 اصل مقاله (353.42 K) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22051/jitl.2020.32722.1043 | ||
| نویسندگان | ||
| Rajab Yahyazadeh* ؛ Zahra Hashempour | ||
| Department of Physics, Islamic Azad University, Khoy Branch, Khoy, Iran | ||
| چکیده | ||
| The current paper investigates the optical absorption spectrum of Al_0.3 Ga_0.7 N/GaN multi-quantum well (MQW) under hydrostatic pressure. To obtain the parameters of Al_0.3 Ga_0.7 N/GaN MQW, such as electron and hole density, bandgap, interband transition energy, electron-hole wave functions, effective mass and dielectric constant, and the hydrostatic pressure effects are taken into account. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of Al_0.3 Ga_0.7 N/GaN MQW and the hole eigenstates are calculated via a 6 × 6 k.pmethod under an applied hydrostatic pressure. It was found that the depth of the quantum wells, bandgaps, band offset, the electron, and hole density increases with the hydrostatic pressure. Also, as the pressure increases, the electron and hole wave functions will have less overlap, the amplitude of the absorption coefficient increases, and the binding energy of the excitons decreases. A change in pressure of up to 10 GPa causes the absorption coefficients peaks of light and heavy holes to shift to low wavelengths of up to 32 nm. | ||
| کلیدواژه‌ها | ||
| hydrostatic Pressure؛ optical absorption؛ exciton؛ multi-quantum well | ||
| عنوان مقاله [English] | ||
| اثر فشار هیدروایستاتیکی بر طیف جذب نوری چاه های کوانتم چند گانه AlGaN/GaN | ||
| نویسندگان [English] | ||
| رجب یحیی زاده؛ زهرا هاشم پور | ||
| گروه فیزیک، دانشگاه آزاد اسلامی واحد خوی، خوی، ایران | ||
| چکیده [English] | ||
| در این مقاله طیف جذب نوری چاه های کوانتم چند گانه Al_0.3 Ga_0.7 N/GaN تحت فشار هیدروایستاتیکی مورد بررسی قرار گرفته است. برای بدست آوردن پارامتر های Al_0.3 Ga_0.7 N/GaN ، نظیر چگالی الکترون و حفره، گاف نوار، انرژی گذار بین باندی، توابع موج الکترون و حفره، جرم موثر و ثابت دی الکتریک، اثر فشار الکتروایستاتیکی در نظر گرفته شده است. در این ساختار از روش اختلاف کم برای بدست آوردن ویژه مقادیر و ویژه حالت های الکترونی و از روش k.p 6×6 برای ویژه حالت های حفره تحت فشار هیدروایستاتیکی استفاده شده است. بعد از بررسی به این تیجه رسیدیم که عمق چاه های کوانتم، نوارهای انرژی، ناپیوستگی نواری و چگالی الکترون و حفره تحت فشار هیدرو ایستاتیک افزایش می یابند. همچنین با افزایش فشار همپوشی توابع موج الکترون و حفره کم ، دامنه ضریب جذب افزایش و انرژی بستگی اکسایتون کاهش می یابد. افزایش فشار به مقدار 10GPa باعث می شود که پیک های جذب مربوط به حفره های سبک و سنگین به اندازه32nm به سمت طول موج های کم منتقل شوند. | ||
| کلیدواژه‌ها [English] | ||
| فشار هیدروایستاتیکی, جذب نوری, اکسایتون, چاه کوانتم چند گانه | ||
| مراجع | ||
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